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TwinMOS 8DPT5MK8-TATP 2GB
Chun Well Technology Holding Limited D4U0832161B 8GB

TwinMOS 8DPT5MK8-TATP 2GB vs Chun Well Technology Holding Limited D4U0832161B 8GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.1
    测试中的平均数值
Chun Well Technology Holding Limited D4U0832161B 8GB 需要考虑的原因
Chun Well Technology Holding Limited D4U0832161B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 53
    左右 -56% 更低的延时
  • 更快的写入速度，GB/s
    12.6 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Chun Well Technology Holding Limited D4U0832161B 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 34
  • 读取速度，GB/s
    3,726.4 left arrow 19.1
  • 写入速度，GB/s
    1,590.1 left arrow 12.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    522 left arrow 3178

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Chun Well Technology Holding Limited D4U0832161B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Chun Well Technology Holding Limited D4U0832161B 8GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
V-Color Technology Inc. TA48G32S816SK 8GB
V-Color Technology Inc. TA48G32S816SK 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
G Skill Intl F4-3000C16-8GTZR 8GB
G Skill Intl F4-3000C16-8GTZR 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMW32GX4M4K3733C17 8GB
Corsair CMW32GX4M4K3733C17 8GB
内存RAM
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston 9965639-002.A01G 8GB
Kingston 9965639-002.A01G 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Apacer Technology GD2.1831WS.001 16GB
Apacer Technology GD2.1831WS.001 16GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Corsair CMW64GX4M4C3200C16 16GB
Corsair CMW64GX4M4C3200C16 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Kllisre 0000 8GB
Kllisre 0000 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston KHX2400C12D4/16GX 16GB
Kingston KHX2400C12D4/16GX 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
内存RAM
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Kingston 9905783-025.A01G 16GB
Kingston 9905783-025.A01G 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Lexar Co Limited LD4AS016G-H2666G 16GB
Lexar Co Limited LD4AS016G-H2666G 16GB
内存RAM