TwinMOS 8DPT5MK8-TATP 2GB vs Corsair CMK32GX4M4B3600C18 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Corsair CMK32GX4M4B3600C18 8GB

Corsair CMK32GX4M4B3600C18 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.8

测试中的平均数值

Corsair CMK32GX4M4B3600C18 8GB

需要考虑的原因
Corsair CMK32GX4M4B3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 53

左右 -66% 更低的延时
更快的写入速度，GB/s

14.4 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK32GX4M4B3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 32
读取速度，GB/s

3,726.4 16.8
写入速度，GB/s

1,590.1 14.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3401

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology M471A1K43CB1-CTD 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M395T2863QZ4-CF76 1GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

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Apacer Technology 78.CAGP7.C7C0B 8GB

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Kllisre HMA81GU6AFR8N-VK 8GB

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Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

G Skill Intl F4-3200C16-8GTZKW 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Corsair CMK16GX4M2B3600C18 8GB

Corsair CMK16GX4M2B3600C18 8GB