TwinMOS 8DPT5MK8-TATP 2GB vs Corsair CMW32GX4M2D3600C18 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Corsair CMW32GX4M2D3600C18 16GB

Corsair CMW32GX4M2D3600C18 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 19

测试中的平均数值

Corsair CMW32GX4M2D3600C18 16GB

需要考虑的原因
Corsair CMW32GX4M2D3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 53

左右 -77% 更低的延时
更快的写入速度，GB/s

15.2 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMW32GX4M2D3600C18 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 30
读取速度，GB/s

3,726.4 19.0
写入速度，GB/s

1,590.1 15.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3655

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-UD4-4300 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M471A1K43DB1-CWE 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology CT4G4SFS8266.C8FE 4GB

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AMD R7416G2400U2S 16GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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SK Hynix HYMP125U64CP8-S6 2GB

Kingston 9965589-033.D00G 8GB

Kingston 9965589-033.D00G 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

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A-DATA Technology AD73I1C1674EV 4GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB