TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-4600C19-8GTZSWC 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 22.3

测试中的平均数值

G Skill Intl F4-4600C19-8GTZSWC 8GB

需要考虑的原因
G Skill Intl F4-4600C19-8GTZSWC 8GB

报告一个错误

低于PassMark测试中的延时，ns

16 53

左右 -231% 更低的延时
更快的写入速度，GB/s

21.2 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 16
读取速度，GB/s

3,726.4 22.3
写入速度，GB/s

1,590.1 21.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3952

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Corsair CM4X16GE2400C16K4 16GB

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Samsung M471B5673FH0-CF8 2GB

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Kingston 9905403-174.A00LF 2GB

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Crucial Technology CT16G4SFD824A.M16FJ 16GB

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Kingston KF552C40-16 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology CT8G4SFRA266.C8FD1 8GB