TwinMOS 8DPT5MK8-TATP 2GB vs Gloway International (HK) STK2400C15-16GB 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Gloway International (HK) STK2400C15-16GB 16GB

Gloway International (HK) STK2400C15-16GB 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17

测试中的平均数值

Gloway International (HK) STK2400C15-16GB 16GB

需要考虑的原因
Gloway International (HK) STK2400C15-16GB 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 53

左右 -130% 更低的延时
更快的写入速度，GB/s

12.5 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Gloway International (HK) STK2400C15-16GB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 23
读取速度，GB/s

3,726.4 17.0
写入速度，GB/s

1,590.1 12.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3098

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology J644GU44J9266NQ 32GB

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Avant Technology F6451U64F9333G 4GB

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Corsair CM5S16GM4800A40K2 16GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

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AMD R538G1601U2S-UO 8GB

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Gold Key Technology Co Ltd NMUD480E86-3200 8GB