TwinMOS 8DPT5MK8-TATP 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 53

左右 -47% 更低的延时
更快的读取速度，GB/s

9.3 3

测试中的平均数值
更快的写入速度，GB/s

7.0 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 36
读取速度，GB/s

3,726.4 9.3
写入速度，GB/s

1,590.1 7.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 1891

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

Kingston KN2M64-ETB 8GB

Kingston KN2M64-ETB 8GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS16G4D240FSE.16FAD 16GB

Crucial Technology BLS16G4D240FSE.16FAD 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Corsair CMV4GX4M1A2400C16 4GB

Corsair CMV4GX4M1A2400C16 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMD16GX4M4B3600C18 4GB

Corsair CMD16GX4M4B3600C18 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Mushkin 99[2/7/4]200F 8GB

Mushkin 99[2/7/4]200F 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9905702-027.A00G 8GB

Kingston 9905702-027.A00G 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB