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TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 4ATF51264HZ-3G2J1 4GB

TwinMOS 8DPT5MK8-TATP 2GB vs Micron Technology 4ATF51264HZ-3G2J1 4GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.7
    测试中的平均数值
Micron Technology 4ATF51264HZ-3G2J1 4GB 需要考虑的原因
Micron Technology 4ATF51264HZ-3G2J1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 53
    左右 -26% 更低的延时
  • 更快的写入速度，GB/s
    12.4 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 42
  • 读取速度，GB/s
    3,726.4 left arrow 15.7
  • 写入速度，GB/s
    1,590.1 left arrow 12.4
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    522 left arrow 2352

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Micron Technology 4ATF51264HZ-3G2J1 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
G Skill Intl F4-3600C16-16GTZN 16GB
G Skill Intl F4-3600C16-16GTZN 16GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
内存RAM
Kingston 99U5315-023.A00LF 512MB
Kingston 99U5315-023.A00LF 512MB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3200C14-8GTZ 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMK16GX4M2D3000C16 8GB
Corsair CMK16GX4M2D3000C16 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9965600-005.A01G 16GB
Kingston 9965600-005.A01G 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9905625-075.A00G 16GB
Kingston 9905625-075.A00G 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
内存RAM