TwinMOS 8DPT5MK8-TATP 2GB vs Samsung M378A1K43BB1-CRC 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值

Samsung M378A1K43BB1-CRC 8GB

需要考虑的原因
Samsung M378A1K43BB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 53

左右 -141% 更低的延时
更快的写入速度，GB/s

9.5 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M378A1K43BB1-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 22
读取速度，GB/s

3,726.4 15.9
写入速度，GB/s

1,590.1 9.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 2611

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-12800CL7-4GBXM 4GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Apacer Technology GD2.1831WS.002 16GB

Apacer Technology GD2.1831WS.002 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-3600C18-8GTZR 8GB

G Skill Intl F4-3600C18-8GTZR 8GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMA82GR7MFR8N-UH 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT8G4SFS824A.C8FJ 8GB

Crucial Technology CT8G4SFS824A.C8FJ 8GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

G Skill Intl F4-3200C18-8GRS 8GB

G Skill Intl F4-3200C18-8GRS 8GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Samsung M378A2K43BB1-CPB 16GB

Samsung M378A2K43BB1-CPB 16GB