TwinMOS 8DPT5MK8-TATP 2GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.6

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 53

左右 -121% 更低的延时
更快的写入速度，GB/s

12.1 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 24
读取速度，GB/s

3,726.4 15.6
写入速度，GB/s

1,590.1 12.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Teikon TMA851U6AFR6N-UHHC 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Kingston 9905678-012.A00G 8GB

Kingston 9905678-012.A00G 8GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMR16GX4M2C3466C16 8GB

Corsair CMR16GX4M2C3466C16 8GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

G Skill Intl F4-2800C16-8GVG 8GB

G Skill Intl F4-2800C16-8GVG 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

DSL Memory D4SS1G082SH21A-B 16GB

DSL Memory D4SS1G082SH21A-B 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT8G4DFS8266.C8FE 8GB

Crucial Technology CT8G4DFS8266.C8FE 8GB