TwinMOS 8DPT5MK8-TATP 2GB vs SK Hynix HMA84GR7MFR4N-UH 32GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

SK Hynix HMA84GR7MFR4N-UH 32GB

SK Hynix HMA84GR7MFR4N-UH 32GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

低于PassMark测试中的延时，ns

53 55

左右 4% 更低的延时

SK Hynix HMA84GR7MFR4N-UH 32GB

需要考虑的原因
SK Hynix HMA84GR7MFR4N-UH 32GB

报告一个错误

更快的读取速度，GB/s

9.4 3

测试中的平均数值
更快的写入速度，GB/s

7.7 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

SK Hynix HMA84GR7MFR4N-UH 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 55
读取速度，GB/s

3,726.4 9.4
写入速度，GB/s

1,590.1 7.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 2230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMX4GX3M1A1333C9 4GB

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Corsair CM3X2G1600C9DHX 2GB

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Patriot Memory (PDP Systems) 3200 C18 Series 8GB

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Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-3600C14-8GTRSB 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

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Kingston 99U5474-010.A00LF 2GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

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