TwinMOS 9D7TCO4E-TATP 8GB vs G Skill Intl F4-2400C15-16GIS 16GB

总分

TwinMOS 9D7TCO4E-TATP 8GB

TwinMOS 9D7TCO4E-TATP 8GB

总分

G Skill Intl F4-2400C15-16GIS 16GB

G Skill Intl F4-2400C15-16GIS 16GB

差异规格评论

差异

TwinMOS 9D7TCO4E-TATP 8GB

需要考虑的原因
TwinMOS 9D7TCO4E-TATP 8GB

报告一个错误

G Skill Intl F4-2400C15-16GIS 16GB

需要考虑的原因
G Skill Intl F4-2400C15-16GIS 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 34

左右 -10% 更低的延时
更快的读取速度，GB/s

16.7 13.1

测试中的平均数值
更快的写入速度，GB/s

11.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 9D7TCO4E-TATP 8GB

G Skill Intl F4-2400C15-16GIS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 31
读取速度，GB/s

13.1 16.7
写入速度，GB/s

8.1 11.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2393 3133

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA451U6AFR8N-TF 4GB

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SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-2666C19-32GNT 32GB

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Kingston K531R8-MIN 4GB

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Patriot Memory (PDP Systems) PSD44G213382 4GB

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Samsung M393B5170FH0-CK0 4GB

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Kingston KHX3200C18D4/4G 4GB

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DSL Memory D4SS1G081SH24A-A 8GB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Samsung M471A2K43DB1-CTD 16GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Corsair CMK64GX4M8Z2933C16 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Crucial Technology BLS4G4D240FSA.M8FADG 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4266C19-4GTZ 4GB

G Skill Intl F4-4266C19-4GTZ 4GB