TwinMOS 9DNPBNZB-TATP 4GB vs Samsung M378B2873FHS-CH9 1GB

总分

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

总分

Samsung M378B2873FHS-CH9 1GB

Samsung M378B2873FHS-CH9 1GB

差异规格评论

差异

TwinMOS 9DNPBNZB-TATP 4GB

需要考虑的原因
TwinMOS 9DNPBNZB-TATP 4GB

报告一个错误

更快的写入速度，GB/s

8.4 7.5

测试中的平均数值

Samsung M378B2873FHS-CH9 1GB

需要考虑的原因
Samsung M378B2873FHS-CH9 1GB

报告一个错误

低于PassMark测试中的延时，ns

22 25

左右 -14% 更低的延时
更快的读取速度，GB/s

12.7 12.5

测试中的平均数值

规格

完整的技术规格清单

TwinMOS 9DNPBNZB-TATP 4GB

Samsung M378B2873FHS-CH9 1GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

25 22
读取速度，GB/s

12.5 12.7
写入速度，GB/s

8.4 7.5
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2180 1175

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL16G32C16U4B.16FE 16GB

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Corsair CMD32GX4M2C3466C16W 16GB

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Samsung 1600 CL10 Series 8GB

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Corsair CM4X8GD3000C16K4D 8GB

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Apacer Technology 78.01G86.9H50C 1GB

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Kingston KMKYF9-MIH 8GB

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takeMS International AG TMS2GB264D083805EV 2GB

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Mushkin 994104 8GB

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Corsair CMSX32GX4M2A3200C22 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Team Group Inc. TEAMGROUP-D4-3600 4GB

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