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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 16HTF12864AY-40EB1 1GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Micron Technology 16HTF12864AY-40EB1 1GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
Micron Technology 16HTF12864AY-40EB1 1GB

Micron Technology 16HTF12864AY-40EB1 1GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    1,336.0 left arrow 1,026.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    6400 left arrow 3200
    左右 2% 更高的带宽
Micron Technology 16HTF12864AY-40EB1 1GB 需要考虑的原因
Micron Technology 16HTF12864AY-40EB1 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    69 left arrow 96
    左右 -39% 更低的延时

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 16HTF12864AY-40EB1 1GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    96 left arrow 69
  • 读取速度，GB/s
    2,725.2 left arrow 2,214.5
  • 写入速度，GB/s
    1,336.0 left arrow 1,026.2
  • 内存带宽，mbps
    6400 left arrow 3200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-3200, SSTL 1.8V, CAS Supported: 3 4
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 3-3-3-12 / 400 MHz
  • 排名PassMark (越多越好)
    438 left arrow 373

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB

Micron Technology 16HTF12864AY-40EB1 1GB RAM的比较

Kingston 99U5702-020.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 16HTF12864AY-40EB1 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
内存RAM
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内存RAM
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