Unifosa Corporation HU564404EP0200 4GB vs Corsair CM4X8GD3000C16K4D 8GB

总分

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

总分

Corsair CM4X8GD3000C16K4D 8GB

Corsair CM4X8GD3000C16K4D 8GB

差异规格评论

差异

Unifosa Corporation HU564404EP0200 4GB

需要考虑的原因
Unifosa Corporation HU564404EP0200 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时

Corsair CM4X8GD3000C16K4D 8GB

需要考虑的原因
Corsair CM4X8GD3000C16K4D 8GB

报告一个错误

更快的读取速度，GB/s

17.1 14.1

测试中的平均数值
更快的写入速度，GB/s

13.0 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation HU564404EP0200 4GB

Corsair CM4X8GD3000C16K4D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

14.1 17.1
写入速度，GB/s

9.5 13.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2354 3221

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

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Mushkin 991586 2GB

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Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2800C16-4GRK 4GB

G Skill Intl F4-2800C16-4GRK 4GB