Unifosa Corporation HU564404EP0200 4GB vs Corsair CM4X8GE2666C16K8 8GB

总分

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

总分

Corsair CM4X8GE2666C16K8 8GB

Corsair CM4X8GE2666C16K8 8GB

差异规格评论

差异

Unifosa Corporation HU564404EP0200 4GB

需要考虑的原因
Unifosa Corporation HU564404EP0200 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时

Corsair CM4X8GE2666C16K8 8GB

需要考虑的原因
Corsair CM4X8GE2666C16K8 8GB

报告一个错误

更快的读取速度，GB/s

15.3 14.1

测试中的平均数值
更快的写入速度，GB/s

11.0 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation HU564404EP0200 4GB

Corsair CM4X8GE2666C16K8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

14.1 15.3
写入速度，GB/s

9.5 11.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2354 3041

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

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Samsung M393B2G70BH0-YK0 16GB

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Micron Technology CT8G4DFD8213.16FA11 8GB

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AMD AE34G1601U1 4GB

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Corsair CMK8GX4M2A2400C16 4GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Apacer Technology 78.DAGRL.4050C 16GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Crucial Technology CT8G4DFS632A.M4FE 8GB

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Samsung M471B5273EB0-CK0 4GB

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Crucial Technology CT102464BD160B.M16 8GB

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Team Group Inc. TEANGROUP-UD4-2400 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology CT16G4SFRA266.M16FR 16GB

Crucial Technology CT16G4SFRA266.M16FR 16GB