Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Corsair CMD32GX4M4B3733C17 8GB

总分

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

总分

Corsair CMD32GX4M4B3733C17 8GB

Corsair CMD32GX4M4B3733C17 8GB

差异规格评论

差异

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

报告一个错误

Corsair CMD32GX4M4B3733C17 8GB

需要考虑的原因
Corsair CMD32GX4M4B3733C17 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 44

左右 -120% 更低的延时
更快的读取速度，GB/s

19.4 10.9

测试中的平均数值
更快的写入速度，GB/s

14.9 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Corsair CMD32GX4M4B3733C17 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 20
读取速度，GB/s

10.9 19.4
写入速度，GB/s

7.5 14.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1853 3509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS8213.C8FBD1 8GB

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SpecTek Incorporated PSD34G13332 4GB

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A-DATA Technology AD73I1C1674EV 4GB

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Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Team Group Inc. DDR4 2666 8GB

Team Group Inc. DDR4 2666 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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SK Hynix HMA82GU6DJR8N-XN 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Kingston KCRXJ6-MIE 16GB

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