Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Corsair CMU16GX4M2D3000C16 8GB

总分

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分

Corsair CMU16GX4M2D3000C16 8GB

Corsair CMU16GX4M2D3000C16 8GB

差异规格评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

报告一个错误

Corsair CMU16GX4M2D3000C16 8GB

需要考虑的原因
Corsair CMU16GX4M2D3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 25

左右 -25% 更低的延时
更快的读取速度，GB/s

19.7 12.6

测试中的平均数值
更快的写入速度，GB/s

14.9 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Corsair CMU16GX4M2D3000C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 20
读取速度，GB/s

12.6 19.7
写入速度，GB/s

7.2 14.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2051 3400

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology CT8G4DFD8213.16FA11 8GB

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Samsung M393B5270CH0-CH9 4GB

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Crucial Technology BLS8G4D240FSB.16FBR2 8GB

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SK Hynix HYMP125S64CP8-S6 2GB

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SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

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Kingston 9905599-029.A00G 4GB

Kingston 9905599-029.A00G 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-3200C14-32GTRS 32GB

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AMD R9S48G3206U2S 8GB

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King Tiger Technology TMKG8G3000C17(XMP) 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB