RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-8GVKB 8GB
Compare
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-3200C16-8GVKB 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
G Skill Intl F4-3200C16-8GVKB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
29
Around 14% lower latency
Reasons to consider
G Skill Intl F4-3200C16-8GVKB 8GB
Report a bug
Faster reading speed, GB/s
18.5
16.1
Average value in the tests
Faster write speed, GB/s
14.4
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-8GVKB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
29
Read speed, GB/s
16.1
18.5
Write speed, GB/s
10.1
14.4
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
3457
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-8GVKB 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KF556C40-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F5-6400J3239G16G 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-8GVKB 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Apacer Technology GD2.11173T.001 4GB
Samsung M378B5173BH0-CH9 4GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
Samsung M378A1G43DB0-CPB 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Micron Technology CT8G4DFD8213.16FA2 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Mushkin MRA4S320GJJM32G 32GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Netac Technology Co Ltd E40832A 8GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMD16GX4M4C3200C15 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMU16GX4M2D3200C16 8GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston 9905734-063.A00G 32GB
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
Report a bug
×
Bug description
Source link