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Nanya Technology NT4GC64B8HG0NS-DI 4GB
Samsung M471B5173EB0-YK0 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB vs Samsung M471B5173EB0-YK0 4GB

Overall score
star star star star star
Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Overall score
star star star star star
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Differences Specifications Comments

Differences

Nanya Technology NT4GC64B8HG0NS-DI 4GB Reasons to consider
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Report a bug
  • Faster write speed, GB/s
    9.0 left arrow 8.2
    Average value in the tests
Samsung M471B5173EB0-YK0 4GB Reasons to consider
Samsung M471B5173EB0-YK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    44 left arrow 45
    Around -2% lower latency

Specifications

Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Samsung M471B5173EB0-YK0 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    45 left arrow 44
  • Read speed, GB/s
    13.0 left arrow 13.0
  • Write speed, GB/s
    9.0 left arrow 8.2
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2079 left arrow 2069

Nanya Technology NT4GC64B8HG0NS-DI 4GB RAM comparisons

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SK Hynix HMT451S6BFR8A-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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