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Nanya Technology NT4GC64B8HG0NS-DI 4GB
Samsung M471B5173EB0-YK0 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB vs Samsung M471B5173EB0-YK0 4GB

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Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Punteggio complessivo
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Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Differenze Specifiche tecniche Commenti

Differenze

Nanya Technology NT4GC64B8HG0NS-DI 4GB Motivi da considerare
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    9.0 left arrow 8.2
    Valore medio nei test
Samsung M471B5173EB0-YK0 4GB Motivi da considerare
Samsung M471B5173EB0-YK0 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    44 left arrow 45
    Intorno -2% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Samsung M471B5173EB0-YK0 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    45 left arrow 44
  • Velocità di lettura, GB/s
    13.0 left arrow 13.0
  • Velocità di scrittura, GB/s
    9.0 left arrow 8.2
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2079 left arrow 2069

Nanya Technology NT4GC64B8HG0NS-DI 4GB Confronto tra le RAM

SK Hynix HMA42GR7AFR4N-TF 16GB
Crucial Technology BL8G32C16S4B.8FE 8GB

Samsung M471B5173EB0-YK0 4GB Confronto tra le RAM

SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

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