Samsung M3 78T5663RZ3-CF7 2GB vs Mushkin 99[2/7/4]192[F/T] 4GB

Note globale

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Note globale

Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

Différences Spécifications Commentaires

Différences

Samsung M3 78T5663RZ3-CF7 2GB

Raisons de considérer
Samsung M3 78T5663RZ3-CF7 2GB

Signaler un bogue

Vitesse de lecture plus rapide, GB/s

4 15.8

Valeur moyenne dans les tests

Mushkin 99[2/7/4]192[F/T] 4GB

Raisons de considérer
Mushkin 99[2/7/4]192[F/T] 4GB

Signaler un bogue

Vitesse d'écriture plus rapide, GB/s

8.5 2,784.6

Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps

17000 6400

Autour de 2.66 bande passante supérieure

Spécifications

Liste complète des spécifications techniques

Samsung M3 78T5663RZ3-CF7 2GB

Mushkin 99[2/7/4]192[F/T] 4GB

Principales caractéristiques

Type de mémoire

DDR2 DDR4
Latence dans PassMark, ns

65 65
Vitesse de lecture, GB/s

4,806.8 15.8
Vitesse d'écriture, GB/s

2,784.6 8.5
Largeur de bande de la mémoire, mbps

6400 17000

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Vitesse d'horloge

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classement PassMark (Plus il y en a, mieux c'est)

932 1932

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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