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ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB

ASint Technology SSA302G08-EGN1C 4GB vs Crucial Technology CT8G4SFS824A.C8FAD1 8GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
Crucial Technology CT8G4SFS824A.C8FAD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.8 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.6 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 26
  • 读取速度，GB/s
    12.6 left arrow 14.8
  • 写入速度，GB/s
    9.5 left arrow 9.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 2437

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
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内存RAM
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Kingston 9905403-061.A00LF 2GB
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内存RAM
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内存RAM
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Crucial Technology CT8G4DFS824A.C8FE 8GB
内存RAM
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A-DATA Technology AD73I1B1672EG 2GB
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内存RAM