ASint Technology SSA302G08-EGN1C 4GB vs Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 51

左右 49% 更低的延时

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 12.6

测试中的平均数值
更快的写入速度，GB/s

11.8 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 51
读取速度，GB/s

12.6 15.6
写入速度，GB/s

9.5 11.8
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2174 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905471-071.A00LF 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Samsung DDR3 8GB 1600MHz 8GB

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A-DATA Technology AO1P26KCST2-BZISHC 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Kingmax Semiconductor GSLF62F-D8---------- 4GB

Kingmax Semiconductor GSLF62F-D8---------- 4GB

Micron Technology 36JSF2G72PZ-1G9N1 16GB

Micron Technology 36JSF2G72PZ-1G9N1 16GB

Apacer Technology 78.BAGNF.40C0B 4GB

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G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Smart Modular SF464128CKHI6DFSEG 4GB

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