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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Netac Technology Co Ltd EKBLUE4162417AD 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Netac Technology Co Ltd EKBLUE4162417AD 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
16.8
测试中的平均数值
需要考虑的原因
Netac Technology Co Ltd EKBLUE4162417AD 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
65
左右 -171% 更低的延时
更快的写入速度,GB/s
12.0
1,592.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
24
读取速度,GB/s
3,580.8
16.8
写入速度,GB/s
1,592.0
12.0
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
572
2946
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB RAM的比较
Samsung M393B1K70CH0-CH9 8GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
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报告一个错误
×
Bug description
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