Kingston KVR533D2N4 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

报告一个错误

低于PassMark测试中的延时，ns

41 75

左右 -83% 更低的延时
更快的读取速度，GB/s

9.3 1

测试中的平均数值
更快的写入速度，GB/s

6.9 1,672.1

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 41
读取速度，GB/s

1,943.5 9.3
写入速度，GB/s

1,672.1 6.9
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

301 2044

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112U64CP8-S6 1GB

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A-DATA Technology AO1E34RCSV1-BD7S 16GB

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Apacer Technology 78.A1GA0.9L4 2GB

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Ramaxel Technology RMUA5210ME88HCF-3200 32GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Samsung M378B5273DH0-CK0 4GB

Samsung M378B5273DH0-CK0 4GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-2400C15-4GNT 4GB

G Skill Intl F4-2400C15-4GNT 4GB