Samsung M3 78T3354BZ0-CCC 256MB vs A-DATA Technology AO2P26KC8T1-BC1S 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

A-DATA Technology AO2P26KC8T1-BC1S 8GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 13.6

测试中的平均数值

A-DATA Technology AO2P26KC8T1-BC1S 8GB

需要考虑的原因
A-DATA Technology AO2P26KC8T1-BC1S 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 46

左右 -48% 更低的延时
更快的写入速度，GB/s

7.3 1,519.2

测试中的平均数值
更高的内存带宽，mbps

21300 3200

左右 6.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

A-DATA Technology AO2P26KC8T1-BC1S 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 31
读取速度，GB/s

2,909.8 13.6
写入速度，GB/s

1,519.2 7.3
内存带宽，mbps

3200 21300

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

241 2307

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Corsair CM4X16GC3200C16K2E 16GB

Corsair CM4X16GC3200C16K2E 16GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Corsair CMSX16GX4M1A2400C16 16GB

Corsair CMSX16GX4M1A2400C16 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Corsair CMD32GX4M4C3200C14C 8GB

Corsair CMD32GX4M4C3200C14C 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2800C16-8GVG 8GB

G Skill Intl F4-2800C16-8GVG 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Patriot Memory (PDP Systems) PSD34G160081S 4GB

Patriot Memory (PDP Systems) PSD34G160081S 4GB

Kingston KHX1600C10D3/8GXF 8GB

Kingston KHX1600C10D3/8GXF 8GB

G Skill Intl F4-2800C16-4GRK 4GB

G Skill Intl F4-2800C16-4GRK 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-3000C15-8GVS 8GB

G Skill Intl F4-3000C15-8GVS 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB