Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-2400C17-4GIS 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.3

测试中的平均数值

G Skill Intl F4-2400C17-4GIS 4GB

需要考虑的原因
G Skill Intl F4-2400C17-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 46

左右 -109% 更低的延时
更快的写入速度，GB/s

13.2 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2400C17-4GIS 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 22
读取速度，GB/s

2,909.8 17.3
写入速度，GB/s

1,519.2 13.2
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2648

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology BL4G24C16U4B.8FE 4GB

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Samsung M391B5673EH1-CH9 2GB

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Corsair CMD32GX4M4C3200C14M 8GB

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Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

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Micron Technology 4ATF1G64HZ-3G2E1 8GB

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Smart Modular SMU4WEC8C1K0464FCG 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Kingston XK2M26-MIE 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMT32GX4M4Z3200C16 8GB

Corsair CMT32GX4M4Z3200C16 8GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

Kingston KF556C40-16 16GB

Kingston KF556C40-16 16GB