Samsung M3 78T3354BZ0-CCC 256MB vs SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.5

测试中的平均数值

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 46

左右 -64% 更低的延时
更快的写入速度，GB/s

16.1 1,519.2

测试中的平均数值
更高的内存带宽，mbps

23400 3200

左右 7.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 28
读取速度，GB/s

2,909.8 17.5
写入速度，GB/s

1,519.2 16.1
内存带宽，mbps

3200 23400

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

3-3-3-12 / 400 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

241 3758

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SK Hynix HMT31GR7BFR4C-H9 8GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingston 8ATF1G64AZ-2G3A1 8GB

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Kingston ACR256X64D3S1333C9 2GB

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AMD AE34G1601U1 4GB

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Kingmax Semiconductor GZNG43F-18---------- 8GB

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SK Hynix GKE160UD102408-2400 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston HP26D4U6S8ME-8X 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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SK Hynix HMA82GS6CJR8N-XN 16GB

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Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

G Skill Intl F4-3800C14-8GTZN 8GB

G Skill Intl F4-3800C14-8GTZN 8GB

SK Hynix HMT351U6AFR8C-H9 4GB

SK Hynix HMT351U6AFR8C-H9 4GB

Samsung M471A1A43CB1-CRC 8GB

Samsung M471A1A43CB1-CRC 8GB