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Samsung M3 78T5663RZ3-CE6 2GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB

Samsung M3 78T5663RZ3-CE6 2GB vs V-Color Technology Inc. TN416G24D817-VHA/R 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
V-Color Technology Inc. TN416G24D817-VHA/R 16GB

V-Color Technology Inc. TN416G24D817-VHA/R 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.7
    测试中的平均数值
V-Color Technology Inc. TN416G24D817-VHA/R 16GB 需要考虑的原因
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 60
    左右 -50% 更低的延时
  • 更快的写入速度，GB/s
    9.4 left arrow 2,168.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 40
  • 读取速度，GB/s
    4,595.2 left arrow 13.7
  • 写入速度，GB/s
    2,168.2 left arrow 9.4
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    941 left arrow 2411

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

V-Color Technology Inc. TN416G24D817-VHA/R 16GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK32GX4M2D3000C16 16GB
Corsair CMK32GX4M2D3000C16 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
Avant Technology W641GU42J9266NC 8GB
Avant Technology W641GU42J9266NC 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK16GX4M2B3333C16 8GB
Corsair CMK16GX4M2B3333C16 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Kingston 9905624-004.A00G 4GB
Kingston 9905624-004.A00G 4GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMA84GR7AFR4N-UH 32GB
SK Hynix HMA84GR7AFR4N-UH 32GB
内存RAM
OCZ OCZ2V8002G 2GB
OCZ OCZ2V8002G 2GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Samsung M471A1K43CBCBCRC 8GB
Samsung M471A1K43CBCBCRC 8GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Kingston 9965589-037.D00G 8GB
Kingston 9965589-037.D00G 8GB
内存RAM