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SK Hynix HMT451S6BFR8A-PB 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

SK Hynix HMT451S6BFR8A-PB 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 44
    左右 -132% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 19
  • 读取速度，GB/s
    12.3 left arrow 19.5
  • 写入速度，GB/s
    7.8 left arrow 15.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1977 left arrow 3435

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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