RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2400C17-8GFT 8GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-2400C17-8GFT 8GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
G Skill Intl F4-2400C17-8GFT 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
低于PassMark测试中的延时,ns
46
73
左右 37% 更低的延时
更快的读取速度,GB/s
5
15
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2400C17-8GFT 8GB
报告一个错误
更快的写入速度,GB/s
7.5
1,852.4
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2400C17-8GFT 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
73
读取速度,GB/s
5,535.6
15.0
写入速度,GB/s
1,852.4
7.5
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
858
1838
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
G Skill Intl F4-2400C17-8GFT 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965745-002.A00G 16GB
Kingston KHX1600C9S3L/8G 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston ACR32D4U2S1ME-8 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston KHX2666C13D4/8GX 8GB
Samsung M378B5173BH0-CH9 4GB
Kingston KVR16N11/8-SP 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Shenzen Recadata Storage Technology 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4266C19-8GTZSW 8GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMH128GX4M4E3200C16 32GB
A-DATA Technology DQVE1908 512MB
Corsair CMD16GX4M4B3333C16 4GB
Kingston ACR16D3LS1KBG/4G 4GB
Kingston ACR16D3LS1KFG/4G 4GB
Samsung M393B1K70CH0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
报告一个错误
×
Bug description
Source link