RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Essencore Limited KD48GU88C-26N1600 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Compare
Essencore Limited KD48GU88C-26N1600 8GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Overall score
Essencore Limited KD48GU88C-26N1600 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Essencore Limited KD48GU88C-26N1600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
71
Around 75% lower latency
Faster reading speed, GB/s
20.5
15.5
Average value in the tests
Faster write speed, GB/s
16.4
8.3
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Report a bug
Specifications
Complete list of technical specifications
Essencore Limited KD48GU88C-26N1600 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
18
71
Read speed, GB/s
20.5
15.5
Write speed, GB/s
16.4
8.3
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3530
1902
Essencore Limited KD48GU88C-26N1600 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Essencore Limited KD48GU88C-26N1600 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Kingston KHX2400C11D3/4GX 4GB
Samsung M378A2K43CB1-CTD 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3600C16-8GTESC 8GB
Samsung M393B4G70EMB-CK0 32GB
A-DATA Technology DDR4 3000 2OZ 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Apacer Technology 78.CAGP7.DFW0C 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
DSL Memory CIR-W4SUSS2408G 8GB
Samsung M393B1K70QB0-CK0 8GB
Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMK8GX4M2A2133C13 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C15-4GIS 4GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-2666C15-8GVR 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMU16GX4M2A2666C16 8GB
Report a bug
×
Bug description
Source link