RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-10600CL9-2GBNT 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
G Skill Intl F3-10600CL9-2GBNT 2GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
G Skill Intl F3-10600CL9-2GBNT 2GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-10600CL9-2GBNT 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
37
Around 30% lower latency
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Faster reading speed, GB/s
16
13.2
Average value in the tests
Faster write speed, GB/s
12.6
8.4
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-10600CL9-2GBNT 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
37
Read speed, GB/s
13.2
16.0
Write speed, GB/s
8.4
12.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2070
2808
G Skill Intl F3-10600CL9-2GBNT 2GB RAM comparisons
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Ramsta Ramsta-2400Mhz-4G 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston KHX8500D2K2/2GN 1GB
Apacer Technology 78.CAGPL.ARC0B 8GB
Kingston 9905403-447.A00LF 4GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Mushkin 99[2/7/4]205F 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Kingston KHX1600C10D3/8GXF 8GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
Kingston 9905702-010.A00G 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9905624-022.A00G 8GB
Kingston 9905702-010.A00G 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Kingston 9905403-156.A00LF 2GB
Corsair CM4X32GE2666C18S2 32GB
takeMS International AG TMS2GB264D082-805G 2GB
INTENSO 4GB
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M474A4G43MB1-CTD 32GB
A-DATA Technology DQKD1A08 1GB
Mushkin 99[2/7/4]189F 4GB
Report a bug
×
Bug description
Source link