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Golden Empire 1GB DDR2 800 CAS=4 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Overall score
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Overall score
star star star star star
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Differences Specifications Comments

Differences

Golden Empire 1GB DDR2 800 CAS=4 1GB Reasons to consider
Golden Empire 1GB DDR2 800 CAS=4 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 16
    Average value in the tests
  • Faster write speed, GB/s
    2,066.5 left arrow 12.6
    Average value in the tests
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 49
    Around -32% lower latency
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 37
  • Read speed, GB/s
    4,577.1 left arrow 16.0
  • Write speed, GB/s
    2,066.5 left arrow 12.6
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    737 left arrow 2808

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM comparisons

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Memory RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
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Kingston 9905678-043.A00G 8GB
Memory RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Memory RAM
Mushkin 996902 2GB
Mushkin 996902 2GB
Kingston CBD26D4U9D8ME-16 16GB
Kingston CBD26D4U9D8ME-16 16GB
Memory RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Memory RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
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Micron Technology 16JTF25664AZ-1G4F1 2GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
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G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
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SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
Memory RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Memory RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
G Skill Intl F4-2400C15-8GFX 8GB
G Skill Intl F4-2400C15-8GFX 8GB
Memory RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston KHX3333C16D4/8GX 8GB
Kingston KHX3333C16D4/8GX 8GB
Memory RAM
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
Memory RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905625-075.A00G 16GB
Kingston 9905625-075.A00G 16GB
Memory RAM