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Golden Empire 1GB DDR2 800 CAS=4 1GB
Lexar Co Limited LD4AS016G-H3200GST 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Lexar Co Limited LD4AS016G-H3200GST 16GB

Overall score
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Overall score
star star star star star
Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Differences Specifications Comments

Differences

Golden Empire 1GB DDR2 800 CAS=4 1GB Reasons to consider
Golden Empire 1GB DDR2 800 CAS=4 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 16.6
    Average value in the tests
  • Faster write speed, GB/s
    2,066.5 left arrow 14.2
    Average value in the tests
Lexar Co Limited LD4AS016G-H3200GST 16GB Reasons to consider
Lexar Co Limited LD4AS016G-H3200GST 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    44 left arrow 49
    Around -11% lower latency
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
Golden Empire 1GB DDR2 800 CAS=4 1GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 44
  • Read speed, GB/s
    4,577.1 left arrow 16.6
  • Write speed, GB/s
    2,066.5 left arrow 14.2
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    737 left arrow 3146

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM comparisons

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Lexar Co Limited LD4AS016G-H3200GST 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Memory RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905630-033.A00G 16GB
Kingston 9905630-033.A00G 16GB
Memory RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Transcend Information TS1GLH64V1H 8GB
Transcend Information TS1GLH64V1H 8GB
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Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Kingston MSI32D4S2S1ME-8 8GB
Kingston MSI32D4S2S1ME-8 8GB
Memory RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Memory RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
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Samsung M471B5173QH0-YK0 4GB
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Corsair CMSX8GX4M2A2666C18 4GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston ACR26D4S9S8HJ-8 8GB
Memory RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Memory RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Memory RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Corsair CMV8GX4M1A2400C16 8GB
Corsair CMV8GX4M1A2400C16 8GB
Memory RAM
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SK Hynix HMT425S6CFR6A-PB 2GB
Apacer Technology 78.BAGMD.AF20B 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
Memory RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
G Skill Intl F4-3000C16-16GTRS 16GB
G Skill Intl F4-3000C16-16GTRS 16GB
Memory RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
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