RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs A-DATA Technology AO2P32NCSV1-BEVS 16GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
A-DATA Technology AO2P32NCSV1-BEVS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Faster reading speed, GB/s
3
17.5
Average value in the tests
Reasons to consider
A-DATA Technology AO2P32NCSV1-BEVS 16GB
Report a bug
Below the latency in the PassMark tests, ns
39
54
Around -38% lower latency
Faster write speed, GB/s
9.1
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
39
Read speed, GB/s
3,573.5
17.5
Write speed, GB/s
1,308.1
9.1
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
371
2852
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMSX32GX4M2A3000C18 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CM4X8GF2400C16S4 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMD32GX4M2C3200C16 16GB
Kingston KVR16N11/8-SP 8GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMK64GX4M4A2666C16 16GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C14-8GTZNB 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Samsung M395T2863QZ4-CF76 1GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Kingston 9905403-500.A01LF 8GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
AMD AE34G1601U1 4GB
G Skill Intl F4-3600C16-16GTZN 16GB
SK Hynix HMT425S6AFR6A-PB 2GB
Gloway International (HK) STK4U2400D17041C 4GB
Corsair CMK16GX4M2F4500C19 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Report a bug
×
Bug description
Source link