RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
Compare
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-4133C17-8GTZR 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
G Skill Intl F4-4133C17-8GTZR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Reasons to consider
G Skill Intl F4-4133C17-8GTZR 8GB
Report a bug
Faster reading speed, GB/s
19.5
16.1
Average value in the tests
Faster write speed, GB/s
16.2
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
25
Read speed, GB/s
16.1
19.5
Write speed, GB/s
10.1
16.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
3890
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4133C17-8GTZR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ20UF8BDU0-GN-F 2GB
A-DATA Technology AD73I1B1672EG 2GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4X8GE2133C13K4 8GB
Samsung M378A1G43DB0-CPB 8GB
Apacer Technology 78.BAGNF.40C0B 4GB
Corsair CMW32GX4M2D3600C18 16GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
Samsung M393B1G70BH0-YK0 8GB
Golden Empire CL15-17-17 D4-2666 8GB
PNY Electronics PNY 2GB
Avant Technology W6451U66J7240ND 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2B2800C14 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-4000C16-16GVK 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMK8GX4M2B3733C17 4GB
Kingston KHX3200C18D4/8G 8GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston XRMWRN-MIE 16GB
Qimonda 64T128020EDL2.5C2 1GB
Corsair CMK128GX4M4E3200C16 32GB
Report a bug
×
Bug description
Source link