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Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB

Samsung M3 78T5663RZ3-CE6 2GB vs Micron Technology V-GeN D4V16GL24A8R 16GB

Overall score
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Overall score
star star star star star
Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Differences Specifications Comments

Differences

Samsung M3 78T5663RZ3-CE6 2GB Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    60 left arrow 68
    Around 12% lower latency
  • Faster reading speed, GB/s
    4 left arrow 16.9
    Average value in the tests
Micron Technology V-GeN D4V16GL24A8R 16GB Reasons to consider
Micron Technology V-GeN D4V16GL24A8R 16GB
Report a bug
  • Faster write speed, GB/s
    8.9 left arrow 2,168.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    60 left arrow 68
  • Read speed, GB/s
    4,595.2 left arrow 16.9
  • Write speed, GB/s
    2,168.2 left arrow 8.9
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    941 left arrow 2007

Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Micron Technology V-GeN D4V16GL24A8R 16GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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