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SK Hynix HMT351S6AFR8C-G7 4GB
Samsung M471B5273CH0-CH9 4GB

SK Hynix HMT351S6AFR8C-G7 4GB vs Samsung M471B5273CH0-CH9 4GB

Overall score
star star star star star
SK Hynix HMT351S6AFR8C-G7 4GB

SK Hynix HMT351S6AFR8C-G7 4GB

Overall score
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Differences Specifications Comments

Differences

SK Hynix HMT351S6AFR8C-G7 4GB Reasons to consider
SK Hynix HMT351S6AFR8C-G7 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 48
    Around 38% lower latency
  • Faster reading speed, GB/s
    12 left arrow 8.9
    Average value in the tests
  • Faster write speed, GB/s
    7.0 left arrow 5.9
    Average value in the tests
Samsung M471B5273CH0-CH9 4GB Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
  • Higher memory bandwidth, mbps
    10600 left arrow 8500
    Around 1.25 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HMT351S6AFR8C-G7 4GB
Samsung M471B5273CH0-CH9 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    30 left arrow 48
  • Read speed, GB/s
    12.0 left arrow 8.9
  • Write speed, GB/s
    7.0 left arrow 5.9
  • Memory bandwidth, mbps
    8500 left arrow 10600
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1948 left arrow 1420

SK Hynix HMT351S6AFR8C-G7 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
SK Hynix HMT351S6AFR8C-H9 4GB

Samsung M471B5273CH0-CH9 4GB RAM comparisons

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RAM Latency Calculator
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Latest comparisons

SK Hynix HMT351S6AFR8C-G7 4GB
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Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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