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A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4000C16-16GTZRA 16GB

A-DATA Technology ADOVE1A0834E 1GB vs G Skill Intl F4-4000C16-16GTZRA 16GB

Overall score
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Overall score
star star star star star
G Skill Intl F4-4000C16-16GTZRA 16GB

G Skill Intl F4-4000C16-16GTZRA 16GB

Differences Specifications Comments

Differences

A-DATA Technology ADOVE1A0834E 1GB Reasons to consider
A-DATA Technology ADOVE1A0834E 1GB
Report a bug
G Skill Intl F4-4000C16-16GTZRA 16GB Reasons to consider
G Skill Intl F4-4000C16-16GTZRA 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 94
    Around -236% lower latency
  • Faster reading speed, GB/s
    20.9 left arrow 1
    Average value in the tests
  • Faster write speed, GB/s
    17.4 left arrow 1,165.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    94 left arrow 28
  • Read speed, GB/s
    1,882.0 left arrow 20.9
  • Write speed, GB/s
    1,165.4 left arrow 17.4
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    305 left arrow 3963

A-DATA Technology ADOVE1A0834E 1GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

G Skill Intl F4-4000C16-16GTZRA 16GB RAM comparisons

Samsung M378A1K43DB2-CTD 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
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