RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Compare
A-DATA Technology DQVE1908 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
16.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
66
Around -154% lower latency
Faster write speed, GB/s
13.5
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
26
Read speed, GB/s
2,775.5
16.8
Write speed, GB/s
1,557.9
13.5
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
382
2880
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM comparisons
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
A-DATA Technology VDQVE1B16 2GB
Heoriady M378A1K43BB2-CTD 8GB
Elpida EBE21UE8ACUA-8G-E 2GB
G Skill Intl F4-2400C16-4GFX 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMD16GX4M4A2666C15 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-2666C18-8GTZR 8GB
Kingston 99U5469-045.A00LF 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3000C14-16GTZR 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMD64GX4M8X4000C19 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2133C15-8GRB 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KHX3466C19D4/16G 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KVR24N17S8/4 4GB
Crucial Technology CT102464BF160B-16F 8GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Report a bug
×
Bug description
Source link