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Elpida EBJ10UE8BAFA-AE-E 1GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB vs Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Overall score
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Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Overall score
star star star star star
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Differences Specifications Comments

Differences

Elpida EBJ10UE8BAFA-AE-E 1GB Reasons to consider
Elpida EBJ10UE8BAFA-AE-E 1GB
Report a bug
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB Reasons to consider
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 65
    Around -150% lower latency
  • Faster reading speed, GB/s
    14.6 left arrow 6.1
    Average value in the tests
  • Faster write speed, GB/s
    11.8 left arrow 4.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 8500
    Around 2.26 higher bandwidth

Specifications

Complete list of technical specifications
Elpida EBJ10UE8BAFA-AE-E 1GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 26
  • Read speed, GB/s
    6.1 left arrow 14.6
  • Write speed, GB/s
    4.2 left arrow 11.8
  • Memory bandwidth, mbps
    8500 left arrow 19200
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    985 left arrow 3124

Elpida EBJ10UE8BAFA-AE-E 1GB RAM comparisons

Corsair CM3X1G1600C9 1GB
Corsair CM4X8GF2666C16K8 8GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB RAM comparisons

Samsung M395T2863QZ4-CF76 1GB
Samsung M471B5273CH0-CH9 4GB
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