RAM comparison Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Overall score

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Below the latency in the PassMark tests, ns

27 56

Around 52% lower latency
Faster write speed, GB/s

11.8 10.5

Average value in the tests
Higher memory bandwidth, mbps

21300 19200

Around 1.11% higher bandwidth

Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Complete list of technical specifications

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Main characteristics

Other

Description

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2756 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns