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Hynix Semiconductor (Hyundai Electronics) HMT351S6
Transcend Information TS512MLH64V1H 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs Transcend Information TS512MLH64V1H 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT351S6

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Overall score
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Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT351S6 Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Report a bug
Transcend Information TS512MLH64V1H 4GB Reasons to consider
Transcend Information TS512MLH64V1H 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    23 left arrow 30
    Around -30% lower latency
  • Faster reading speed, GB/s
    16.4 left arrow 8.6
    Average value in the tests
  • Faster write speed, GB/s
    11.7 left arrow 5.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Transcend Information TS512MLH64V1H 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    30 left arrow 23
  • Read speed, GB/s
    8.6 left arrow 16.4
  • Write speed, GB/s
    5.4 left arrow 11.7
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1344 left arrow 2575

Hynix Semiconductor (Hyundai Electronics) HMT351S6 RAM comparisons

Samsung M471B5273CH0-CH9 4GB
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Transcend Information TS512MLH64V1H 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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