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Hynix Semiconductor (Hyundai Electronics) HMT351S6
Transcend Information TS512MLH64V1H 4GB
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Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs Transcend Information TS512MLH64V1H 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Overall score
Transcend Information TS512MLH64V1H 4GB
Differences
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Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6
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Reasons to consider
Transcend Information TS512MLH64V1H 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
30
Around -30% lower latency
Faster reading speed, GB/s
16.4
8.6
Average value in the tests
Faster write speed, GB/s
11.7
5.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Transcend Information TS512MLH64V1H 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
23
Read speed, GB/s
8.6
16.4
Write speed, GB/s
5.4
11.7
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1344
2575
Hynix Semiconductor (Hyundai Electronics) HMT351S6 RAM comparisons
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Transcend Information TS512MLH64V1H 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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Hynix Semiconductor (Hyundai Electronics) HMT351S6
Transcend Information TS512MLH64V1H 4GB
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