RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-2400C17-16GIS 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-2400C17-16GIS 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
G Skill Intl F4-2400C17-16GIS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
16.7
Average value in the tests
Reasons to consider
G Skill Intl F4-2400C17-16GIS 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
65
Around -110% lower latency
Faster write speed, GB/s
9.8
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-2400C17-16GIS 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
31
Read speed, GB/s
3,580.8
16.7
Write speed, GB/s
1,592.0
9.8
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
572
2888
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-2400C17-16GIS 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
Samsung M393B1K70QB0-CK0 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-2400C17-16GIS 16GB
Elpida EBJ41UF8BDW0-GN-F 4GB
Crucial Technology CT51264BA160B.M16F 4GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Team Group Inc. UD5-6400 16GB
G Skill Intl F4-3000C16-16GTRS 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Kingston KF3600C17D4/8GX 8GB
Corsair CMK32GX4M2A2400C16 16GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3600C18-16GTZN 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Kingston KF560C40-16 16GB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
EVGA 16G-D3-1600-MR 8GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Report a bug
×
Bug description
Source link