RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
85
Around 72% lower latency
Faster reading speed, GB/s
16
15.1
Average value in the tests
Faster write speed, GB/s
12.5
8.1
Average value in the tests
Reasons to consider
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
85
Read speed, GB/s
16.0
15.1
Write speed, GB/s
12.5
8.1
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
1772
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
A-DATA Technology AM1P26KCST2-BABS 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
A-DATA Technology AM1L16BC8R2-B1QS 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMD16GX4M4B3333C16 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CM4X4GF2133C13K4 4GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-3000C15-8GVS 8GB
Mushkin 991988 (996988) 4GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Kingston 9905403-174.A00LF 2GB
Apacer Technology GD2.1831WS.002 16GB
Corsair CML8GX3M2A1866C9 4GB
G Skill Intl F4-3600C18-8GVK 8GB
Corsair CMD16GX3M2A1866C9 8GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
Kingston KVR533D2N4 512MB
Kingston 9905678-110.A00G 8GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-2800C15-4GTZ 4GB
Report a bug
×
Bug description
Source link