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Kingston K531R8-MIN 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Kingston K531R8-MIN 4GB vs Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Overall score
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Overall score
star star star star star
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Differences Specifications Comments

Differences

Kingston K531R8-MIN 4GB Reasons to consider
Kingston K531R8-MIN 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 32
    Around 13% lower latency
  • Faster reading speed, GB/s
    13.4 left arrow 8.2
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 5.2
    Average value in the tests
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB Reasons to consider
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB
Report a bug
  • Higher memory bandwidth, mbps
    14900 left arrow 12800
    Around 1.16 higher bandwidth

Specifications

Complete list of technical specifications
Kingston K531R8-MIN 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    28 left arrow 32
  • Read speed, GB/s
    13.4 left arrow 8.2
  • Write speed, GB/s
    9.0 left arrow 5.2
  • Memory bandwidth, mbps
    12800 left arrow 14900
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-10-9-28 / 1866 MHz
  • Ranking PassMark (The more the better)
    2445 left arrow 1409

Kingston K531R8-MIN 4GB RAM comparisons

Samsung M471A5244CB0-CWE 4GB

Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB RAM comparisons

Samsung M471A5244CB0-CWE 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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