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Micron Technology 16JTF51264HZ-1G6M1 4GB
ASint Technology SLA304G08-EDJ1B 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs ASint Technology SLA304G08-EDJ1B 4GB

Overall score
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Overall score
star star star star star
ASint Technology SLA304G08-EDJ1B 4GB

ASint Technology SLA304G08-EDJ1B 4GB

Differences Specifications Comments

Differences

Micron Technology 16JTF51264HZ-1G6M1 4GB Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
  • Faster write speed, GB/s
    9.0 left arrow 7.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21% higher bandwidth
ASint Technology SLA304G08-EDJ1B 4GB Reasons to consider
ASint Technology SLA304G08-EDJ1B 4GB
Report a bug
  • Faster reading speed, GB/s
    13.8 left arrow 12.9
    Average value in the tests

Specifications

Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
ASint Technology SLA304G08-EDJ1B 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    28 left arrow 28
  • Read speed, GB/s
    12.9 left arrow 13.8
  • Write speed, GB/s
    9.0 left arrow 7.7
  • Memory bandwidth, mbps
    12800 left arrow 10600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2112 left arrow 2350

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons

SK Hynix HMT351S6CFR8C-PB 4GB
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ASint Technology SLA304G08-EDJ1B 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
ASint Technology SLA304G08-EDJ1B 4GB
ASint Technology SLA304G08-EDJ1B 4GB
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