Micron Technology 16JTF51264HZ-1G6M1 4GB vs ASint Technology SLA304G08-EDJ1B 4GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

ASint Technology SLA304G08-EDJ1B 4GB

ASint Technology SLA304G08-EDJ1B 4GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

更快的写入速度，GB/s

9.0 7.7

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

ASint Technology SLA304G08-EDJ1B 4GB

需要考虑的原因
ASint Technology SLA304G08-EDJ1B 4GB

报告一个错误

更快的读取速度，GB/s

13.8 12.9

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

ASint Technology SLA304G08-EDJ1B 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 28
读取速度，GB/s

12.9 13.8
写入速度，GB/s

9.0 7.7
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2112 2350

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

ASint Technology SLA304G08-EDJ1B 4GB

ASint Technology SLA304G08-EDJ1B 4GB

Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N

G Skill Intl F3-14900CL9-4GBZL 4GB

G Skill Intl F3-14900CL9-4GBZL 4GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Kingston KF2666C13D4/8GX 8GB

Kingston KF2666C13D4/8GX 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston MSI24D4U7S8MB-8 8GB

Kingston MSI24D4U7S8MB-8 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB