RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Compare
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-4000C16-16GTZRA 16GB
Overall score
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Overall score
G Skill Intl F4-4000C16-16GTZRA 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
Reasons to consider
G Skill Intl F4-4000C16-16GTZRA 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
92
Around -229% lower latency
Faster reading speed, GB/s
20.9
2
Average value in the tests
Faster write speed, GB/s
17.4
1,266.1
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
92
28
Read speed, GB/s
2,105.4
20.9
Write speed, GB/s
1,266.1
17.4
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
339
3963
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
G Skill Intl F4-4000C16-16GTZRA 16GB RAM comparisons
Samsung M378A1K43DB2-CTD 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston XVTW4H-MIE 32GB
Crucial Technology CT2K102464BD160B 8GB
INTENSO M418039 8GB
Kingston MSI26D4S9D8ME-16 16GB
A-DATA Technology DDR4 3200 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMV16GX4M1A2400C16 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Apacer Technology D22.2221ZA.001 8GB
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
Kingston 99U5474-013.A00LF 2GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Kingston 99U5428-101.A00LF 8GB
G Skill Intl F4-3200C16-8GFX 8GB
Kingston 99P5474-014.A00LF 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO1P24HC4N2-BWCS 4GB
Kingston ACR256X64D3S1333C9 2GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Samsung M378A1G43EB1-CPB 8GB
G Skill Intl F4-3200C15-4GRKD 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A
Golden Empire CL15-17-17 D4-2666 8GB
Report a bug
×
Bug description
Source link